the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. npn silicon transistor 2sc945 npn silicon transistor data sheet document no. d17117ej2v0ds00 (2nd edition) (previous no. tc-3005c) date published march 2004 n cp(k) printed in japan c the mark shows major revised points. 2004 description the 2sc945 is designed for use in driver stage of af amplifier and low speed switching. features ? high voltage lv ceo = 50 v min. ? excellent h fe linearity h fe1 = (0.1 ma)/h fe2 (1.0 ma) = 0.92 typ. absolute maximum ratings maximum temperature storage temperature ? 55 to +150 c junction temperature +150 c maximum maximum power dissipation (t a = 25 c) total power dissipation 250 mw maximum voltages and currents (t a = 25 c) v cbo collector to base voltage 60 v v ceo collector to emitter voltage 50 v v ebo emitter to base voltage 5.0 v i c collector current 100 ma i b base current 20 ma electrical characteristics (t a = 25 c) characteristic symbol test conditions min. typ. max. unit dc current gain h fe1 v ce = 6.0 v, i c = 0.1 ma 50 185 dc current gain h fe2 v ce = 6.0 v, i c = 1.0 ma 90 200 600 gain bandwidth product f t v ce = 6.0 v, i e = ? 10 ma 250 mhz collector to base capacitance c ob v cb = 6.0 v, i e = 0, f = 1.0 mhz 3.0 pf collector cutoff current i cbo v cb = 60 v, i e = 0 a 100 na emitter cutoff current i ebo v eb = 5.0 v, i c = 0 a 100 na base to emitter voltage v be v ce = 6.0 v, i c = 1.0 ma 0.55 0.62 0.65 v collector saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.15 0.3 v base saturation voltage v be(sat) i c = 100 ma, i b = 10 ma 0.86 1.0 v classification of h fe2 rank r q p k range 90 to 180 135 to 270 200 to 400 300 to 600 remark h fe2 test conditions: v ce = 6.0 v, i c = 1.0 ma package drawing (unit: mm) 1.27 2.54 1.77 max. 4.2 max. 13 12.7 min. 5.5 max. 5.2 max. 0.5 2 1. emitter 2. collector 3. base eiaj: sc43b jedec: to92 iec: pa33
data sheet d17117ej2v0ds 2 2sc945 typical characteristics (t a = 25c, unless otherwise noted.) t a t a p t i cbo (t a ) i cbo (t a ? = ? 25 c) i c v ce i c i c h fe h fe v ce i c i c v be i e i c t a ? = ? 75 c 25 c ? 25 c v ce ? = ? 6.0 ? v v ce ? = ? 6.0 ? v t a ? = ? 75 c 25 c ? 25 c v be(sat) v ce(sat) i c ? = ? 10 ? a ? ?
i b i c ? = ? 10 ? a ? ?
i b f t t a i b ? = ? 0.1 ? ma v be(sat) v ce(sat) v ce ? =10 ? v v ce ? = ? 6.0 ? v i c v ce i b ? = ? 0.1 ? ma
data sheet d17117ej2v0ds 3 2sc945 c ib (i c ? = ? 0 ? a) c ob (i e ? = ? 0 ? a) c ob c ib v eb v cb h fe h fe v ce ? = ? 6.0 ? v i c ? = ? 1.0 ? ma v ce ? = ? 6.0 ? v i c ? = ? 1.0 ? ma v ce ? = ? 6.0 ? v i c ? = ? 1.0 ? ma h oe ? h re ? h ie ? h fe ? h oe ? h re ? h ie ? v ce ? = ? 6.0 ? v f ? = ? 1.0 ? khz h e h e (i c ) h e (i c ? = ? 1.0 ? ma) h e i c h e h oe h oe h oe h re h re h fe , ? h ie h fe h oe h fe h re h re h ie h ie h fe , ? h ie e n v ce ? = ? 6.0 ? v i c ? = ? 1.0 ? ma h e h e (v ce ) h e (v ce ? = ? 6.0 ? v) r g r g i n e n e n v ce i c e n i n e n i n
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